Architecture Overview
Q-Memory Architecture Overview
Section titled “Q-Memory Architecture Overview”Q-Memory is an advanced hybrid memory system combining different technologies, designed specifically for quantum machine learning parameter storage and fast checkpointing.
Design Philosophy
Section titled “Design Philosophy”Q-Memory implements a dual-parameter storage approach optimized for quantum computing applications:
- Resistance-based storage (θ): Q-Memory technology for rotation angles
- Capacitance-based storage (φ): Q-Memory technology for paired quantum parameters
This approach enables efficient storage of quantum circuit parameters (RY, RZ gate angles) with native dual-parameter encoding.
System Architecture
Section titled “System Architecture”┌──────────────────────────────────────────────────────────────┐│ Q-MEMORY CHIP ││ ││ ┌────────────────────────────────────────────────────────┐ ││ │ DIGITAL LAYER │ ││ │ ┌──────────┬──────────┬──────────┬──────────┐ │ ││ │ │ SPI/I2C │ Register │ ECC │ Crosstalk│ │ ││ │ │Interface │ Map │ Engine │ LUT │ │ ││ │ └────┬─────┴────┬─────┴────┬─────┴────┬─────┘ │ ││ │ │ │ │ │ │ ││ │ v v v v │ ││ │ ┌──────────────────────────────────────────────┐ │ ││ │ │ 11-bit ADC (256ch) | 6-bit CDC (256ch) │ │ ││ │ │ 11-bit DAC (256ch) | R/W Controller │ │ ││ │ └──────────────────┬───────────────────────────┘ │ ││ └─────────────────────┼──────────────────────────────────┘ ││ v ││ ┌────────────────────────────────────────────────────┐ ││ │ 256×256 Dual-Parameter Array │ ││ │ (Q-Memory Technology) │ ││ │ 11 bits/cell = 719 Kbit │ ││ └────────────────────────────────────────────────────┘ │└──────────────────────────────────────────────────────────────┘Three-Phase Development Roadmap
Section titled “Three-Phase Development Roadmap”Phase 0: Base RAM Foundation
Section titled “Phase 0: Base RAM Foundation”- Storage: 5 bits per cell (32 levels)
- Target: Small quantum models (64-1,024 parameters)
- Performance: 100ns write, 50ns read
- Endurance: 10⁹ cycles
Phase 1: Dual-Parameter Hybrid
Section titled “Phase 1: Dual-Parameter Hybrid”- Storage: 10.4 bits per cell (1,440 states)
- Technology: Q-memory hybrid stack
- Capacity: 2× parameter density (2 params per cell)
- Performance: 3.2µs write for 64 parameters
Phase 2: Production System
Section titled “Phase 2: Production System”- Array: 256×256 crossbar (65,536 cells)
- Capacity: 16,384+ quantum parameters
- Components: FPGA controller, professional ADC/DAC, BCH ECC
- Performance: <1µs parallel write, async execution
Key Innovations
Section titled “Key Innovations”- Q-Store native integration for quantum ML workflows
- Dual-parameter encoding for paired quantum gate angles
- Async execution architecture with zero-blocking I/O
- Hybrid storage strategy combining fast analog + comprehensive SSD
- Multi-layer error correction (BCH analog + quantum mitigation)
Performance Summary
Section titled “Performance Summary”| Metric | Phase 0 | Phase 1 | Phase 2 |
|---|---|---|---|
| Bits/cell | 5 | 10.4 | 10.4 |
| Params/cell | 1 | 2 | 2 |
| Array size | 4×4 (proto) | 4×4 (proto) | 256×256 |
| Write speed | 100ns | 100ns | <1µs (parallel) |
| Q-Store overhead | 0.0002% | 0.0001% | 0.00003% |
| Checkpoint speedup | 7,800× | 15,600× | 50,000× |